Resistive Switching in Semimetallic SrIrO3 Thin Films
Disorder and spatial localization due to thickness reduction allow generating a metal-insulator transition in semimetallic SrIrO3 thin films. Below about 3nm films are insulating with hysteretic I-V curves indicative of resistive switching behavior at room temperature. Current maps allow demonstrating the writing/erasing processes making evident the feasibility of the system for the implementation of Re-RAMs. learn more here.